| PART |
Description |
Maker |
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56
4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56
16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| AM29BL802CB-70RZF AM29BL802CB-65RZE AM29BL802CB-12 |
512K X 16 FLASH 3V PROM, 70 ns, PDSO56
512K X 16 FLASH 3V PROM, 65 ns, PDSO56
512K X 16 FLASH 3V PROM, 120 ns, PDSO56
|
SPANSION LLC
|
| PC48F4400P0TB0E RC48F4400P0TB0EA JS28F256P33TFA RC |
32M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
| MX29LA321MHTC-90G MX29LA321MLTI-90 |
32M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
|
| AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
1M X 16 FLASH 3V PROM, 90 ns, PDSO44
1M X 16 FLASH 3V PROM, 70 ns, PDSO48
1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MBM29PL64LM10PCN-E1 |
4M X 16 FLASH 3V PROM, 100 ns, PDSO56 PLASTIC, TSOP1-56
|
Spansion, Inc.
|
| AM29LV128MH113REI AM29LV128ML123REI AM29LV128ML123 |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PDSO56
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 120 ns, PDSO56
|
Advanced Micro Devices, Inc.
|
| LH28F160S3HNS-TV |
1M X 16 FLASH 3V PROM, 120 ns, PDSO56 16 X 23.70 MM, 1.80 MM HEIGHT, LEAD FREE, PLASTIC, SSOP-56
|
Sharp Electronics, Corp.
|
|
